Global semiconductor manufacturer STMicroelectronics has unveiled its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology. With a focus on the industrial and automotive applications, its most recent invention raises the bar for power efficiency, density, and resilience. The technology is especially well-suited for traction inverters, which are an essential feature of the powertrains of electric vehicles (EVs).
The purpose of the Generation 4 SiC MOSFETs is to enhance the performance and energy economy of EV traction inverters, especially in 400V and 800V electric buses. It is anticipated that these developments would help mid-size and compact electric cars, which are essential to reaching widespread market acceptance. Furthermore, the technology can be applied to high-power industrial applications, which can help create more energy-efficient solutions. Examples of these applications include solar inverters, energy storage systems, and datacenter power supply.
By the first quarter of 2025, STMicroelectronics hopes to have qualified all of its SiC devices in the 750V class and 1200V class. The company intends to release more inventions through 2027 and is dedicated to pushing SiC technology forward.
The focus of STMicroelectronics according to Marco Cassis, President of the Analog, Power & Discrete, MEMS and Sensors Group, is on delivering high-performance SiC technology through its vertically integrated production approach, enabling both industrial efficiency and electric mobility.
At the industry gathering, the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2024 in Raleigh, North Carolina, STMicroelectronics will showcase their technological developments in SiC technology.